SIHP8N50D-GE3
| Parameters | |
|---|---|
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 17 ns |
| Continuous Drain Current (ID) | 8.7A |
| Threshold Voltage | 3V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 0.85Ohm |
| DS Breakdown Voltage-Min | 500V |
| Avalanche Energy Rating (Eas) | 29 mJ |
| Height | 9.01mm |
| Length | 10.51mm |
| Width | 4.65mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 6.000006g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2011 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 156W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 156W |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 850m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 527pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 8.7A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Rise Time | 16ns |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
See Relate Datesheet
