SIHU7N60E-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Weight | 329.988449mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2014 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 78W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 78W |
| Case Connection | DRAIN |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 600m Ω @ 3.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 680pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 7A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| Rise Time | 13ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 14 ns |
| Turn-Off Delay Time | 24 ns |
| Continuous Drain Current (ID) | 7A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 7A |
| Drain-source On Resistance-Max | 0.6Ohm |
| DS Breakdown Voltage-Min | 609V |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
