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SIJ462DP-T1-GE3

MOSFET 60V 8.0mOhm@10V 46.5A N-CH


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SIJ462DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 811
  • Description: MOSFET 60V 8.0mOhm@10V 46.5A N-CH (Kg)

Details

Tags

Parameters
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 31.2W
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G4
Number of Elements 1
Number of Channels 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 30V
Current - Continuous Drain (Id) @ 25°C 46.5A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 10ns
Fall Time (Typ) 8 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 46.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 20 mJ
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
See Relate Datesheet

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