Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SO-8 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | TrenchFET® Gen IV |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PDSO-F5 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 69.4W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.8m Ω @ 15A, 10V |
Vgs(th) (Max) @ Id | 3.6V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3250pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 60A Tc |
Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 7.5V 10V |
Vgs (Max) | ±20V |
Drain Current-Max (Abs) (ID) | 117A |
Drain-source On Resistance-Max | 0.0028Ohm |
Pulsed Drain Current-Max (IDM) | 200A |
DS Breakdown Voltage-Min | 60V |
Avalanche Energy Rating (Eas) | 61.25 mJ |
RoHS Status | ROHS3 Compliant |