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SIR186DP-T1-RE3

MOSFET N-CH 60V 60A POWERPAKSO-8


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SIR186DP-T1-RE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 518
  • Description: MOSFET N-CH 60V 60A POWERPAKSO-8 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Manufacturer Package Identifier S17-0173-Single
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2018
Series TrenchFET® Gen IV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 57W Tc
Power Dissipation 5W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 30V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 150°C
Height 1.17mm
RoHS Status ROHS3 Compliant
See Relate Datesheet

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