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SIR401DP-T1-GE3

VISHAY SIR401DP-T1-GE3 MOSFET Transistor, P Channel, 50 A, -20 V, 0.0025 ohm, -10 V, -600 mV


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SIR401DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 667
  • Description: VISHAY SIR401DP-T1-GE3 MOSFET Transistor, P Channel, 50 A, -20 V, 0.0025 ohm, -10 V, -600 mV (Kg)

Details

Tags

Parameters
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5W
Case Connection DRAIN
Turn On Delay Time 140 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 9080pF @ 10V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 310nC @ 10V
Rise Time 130ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 10V
Vgs (Max) ±12V
Fall Time (Typ) 100 ns
Turn-Off Delay Time 300 ns
Continuous Drain Current (ID) 50A
Threshold Voltage -600mV
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.0032Ohm
Drain to Source Breakdown Voltage -20V
Avalanche Energy Rating (Eas) 45 mJ
Height 1.12mm
Length 6.25mm
Width 5.26mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
JESD-30 Code R-PDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 5W Ta 39W Tc
See Relate Datesheet

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