Parameters | |
---|---|
Number of Terminations | 5 |
ECCN Code | EAR99 |
Resistance | 7.4MOhm |
Terminal Finish | Matte Tin (Sn) |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | C BEND |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 8 |
JESD-30 Code | R-PDSO-C5 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 4.8W Ta 41.7W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 4.8W |
Case Connection | DRAIN |
Turn On Delay Time | 18 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5.5m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1250pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 30A Tc |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Rise Time | 12ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Factory Lead Time | 1 Week |
Fall Time (Typ) | 10 ns |
Mount | Surface Mount |
Turn-Off Delay Time | 23 ns |
Mounting Type | Surface Mount |
Continuous Drain Current (ID) | 30A |
Threshold Voltage | 2.5V |
Package / Case | PowerPAK® SO-8 |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 23.4A |
Number of Pins | 8 |
Drain to Source Breakdown Voltage | 20V |
Pulsed Drain Current-Max (IDM) | 70A |
Weight | 506.605978mg |
Height | 1.04mm |
Length | 4.9mm |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Width | 5.89mm |
Radiation Hardening | No |
Packaging | Tape & Reel (TR) |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Published | 2013 |
Lead Free | Lead Free |
Series | TrenchFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |