Parameters | |
---|---|
JESD-30 Code | R-PDSO-N5 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 104W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 6.25W |
Case Connection | DRAIN |
Turn On Delay Time | 16 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.9m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id | 3.4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 5150pF @ 40V |
Current - Continuous Drain (Id) @ 25°C | 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 81nC @ 7.5V |
Drive Voltage (Max Rds On,Min Rds On) | 7.5V 10V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 30 ns |
Continuous Drain Current (ID) | 32.8A |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.0029Ohm |
Drain to Source Breakdown Voltage | 80V |
Pulsed Drain Current-Max (IDM) | 200A |
Avalanche Energy Rating (Eas) | 80 mJ |
Max Junction Temperature (Tj) | 150°C |
Height | 1.17mm |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SO-8 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Manufacturer Package Identifier | S17-0173-Single |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Series | TrenchFET® Gen IV |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | unknown |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |