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SIR680DP-T1-RE3

MOSFET N-CH 80V 100A POWERPAKSO


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SIR680DP-T1-RE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 622
  • Description: MOSFET N-CH 80V 100A POWERPAKSO (Kg)

Details

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Parameters
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 104W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 6.25W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.9m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5150pF @ 40V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 81nC @ 7.5V
Drive Voltage (Max Rds On,Min Rds On) 7.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 32.8A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0029Ohm
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 80 mJ
Max Junction Temperature (Tj) 150°C
Height 1.17mm
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Surface Mount YES
Transistor Element Material SILICON
Manufacturer Package Identifier S17-0173-Single
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET® Gen IV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
See Relate Datesheet

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