SIR826DP-T1-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Number of Pins | 8 |
| Supplier Device Package | PowerPAK® SO-8 |
| Weight | 506.605978mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2011 |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 6.25W Ta 104W Tc |
| Element Configuration | Single |
| Power Dissipation | 6.25W |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C | 60A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 90nC @ 10V |
| Rise Time | 14ns |
| Drain to Source Voltage (Vdss) | 80V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 36 ns |
| Continuous Drain Current (ID) | 60A |
| Threshold Voltage | 1.2V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.9nF |
| Drain to Source Resistance | 4mOhm |
| Rds On Max | 4.8 mΩ |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
