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SIR872ADP-T1-GE3

MOSFET 150volt 18mOhms@10V 53.7A N-Ch T-FET


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SIR872ADP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 459
  • Description: MOSFET 150volt 18mOhms@10V 53.7A N-Ch T-FET (Kg)

Details

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Parameters
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PDSO-C5
Number of Elements 1
Power Dissipation-Max 6.25W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 6.25W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1286pF @ 75V
Current - Continuous Drain (Id) @ 25°C 53.7A Tc
Gate Charge (Qg) (Max) @ Vgs 47nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 7.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 53.7A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 20V
Avalanche Energy Rating (Eas) 45 mJ
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2015
Series TrenchFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 18MOhm
Technology MOSFET (Metal Oxide)
See Relate Datesheet

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