Parameters | |
---|---|
Terminal Position | DUAL |
Terminal Form | C BEND |
Peak Reflow Temperature (Cel) | 240 |
Time@Peak Reflow Temperature-Max (s) | 40 |
JESD-30 Code | R-PDSO-C5 |
Number of Elements | 1 |
Power Dissipation-Max | 6.25W Ta 104W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 6.25W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 18m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1286pF @ 75V |
Current - Continuous Drain (Id) @ 25°C | 53.7A Tc |
Gate Charge (Qg) (Max) @ Vgs | 47nC @ 10V |
Rise Time | 10ns |
Drain to Source Voltage (Vdss) | 150V |
Drive Voltage (Max Rds On,Min Rds On) | 7.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 7 ns |
Turn-Off Delay Time | 15 ns |
Continuous Drain Current (ID) | 53.7A |
Threshold Voltage | 4.5V |
Gate to Source Voltage (Vgs) | 20V |
Avalanche Energy Rating (Eas) | 45 mJ |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SO-8 |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2015 |
Series | TrenchFET® |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Resistance | 18MOhm |
Technology | MOSFET (Metal Oxide) |