SIRA14DP-T1-GE3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Number of Pins | 8 |
| Weight | 506.605978mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Digi-Reel® |
| Published | 2011 |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| JESD-30 Code | R-PDSO-F5 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.6W Ta 31.2W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.6W |
| Case Connection | DRAIN |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.1m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1450pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 58A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | +20V, -16V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 18 ns |
| Continuous Drain Current (ID) | 20A |
| Threshold Voltage | 1.1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Height | 1.0668mm |
| Length | 5.969mm |
| Width | 5.0038mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
