SIRA52DP-T1-RE3
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Supplier Device Package | PowerPAK® SO-8 |
| Manufacturer Package Identifier | S17-0173-Single |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | TrenchFET® Gen IV |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Channels | 1 |
| Power Dissipation-Max | 48W Tc |
| Power Dissipation | 4.8W |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 7150pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 60A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | +20V, -16V |
| Turn-Off Delay Time | 38 ns |
| Continuous Drain Current (ID) | 39.6A |
| Drain to Source Breakdown Voltage | 40V |
| Max Junction Temperature (Tj) | 150°C |
| Drain to Source Resistance | 1.4mOhm |
| Height | 1.17mm |
See Relate Datesheet
