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SIRA96DP-T1-GE3

MOSFET N-CH 30V 16A POWERPAKSO-8


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SIRA96DP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 552
  • Description: MOSFET N-CH 30V 16A POWERPAKSO-8 (Kg)

Details

Tags

Parameters
Series TrenchFET® Gen IV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 34.7W Tc
Power Dissipation 3.6W
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.8m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1385pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +20V, -16V
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 15A
Drain to Source Breakdown Voltage 30V
Max Junction Temperature (Tj) 150°C
Height 1.17mm
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Manufacturer Package Identifier S17-0173-Single
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
See Relate Datesheet

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