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SIS476DN-T1-GE3

MOSFET 30V 2.5mOhm@10V 40A N-Ch G-IV


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SIS476DN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 439
  • Description: MOSFET 30V 2.5mOhm@10V 40A N-Ch G-IV (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 2.5mOhm
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 3.7W Ta 52W Tc
Element Configuration Single
Power Dissipation 3.7W
Turn On Delay Time 24 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3595pF @ 15V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +20V, -16V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 40A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Height 1.12mm
Length 3.4mm
Width 3.4mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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