Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® 1212-8 |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
Series | TrenchFET® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Resistance | 2.15mOhm |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | C BEND |
JESD-30 Code | S-PDSO-C5 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 3.7W Ta 52W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.7W |
Case Connection | DRAIN |
Turn On Delay Time | 24 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.15m Ω @ 15A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3595pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 40A Tc |
Gate Charge (Qg) (Max) @ Vgs | 77nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | +20V, -16V |
Fall Time (Typ) | 20 ns |
Turn-Off Delay Time | 30 ns |
Continuous Drain Current (ID) | 40A |
Threshold Voltage | 1.1V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 30V |
Avalanche Energy Rating (Eas) | 20 mJ |
Nominal Vgs | 1.1 V |
Height | 1.0668mm |
Length | 3.1496mm |
Width | 3.1496mm |
Radiation Hardening | No |
REACH SVHC | Unknown |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |