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SISA10DN-T1-GE3

MOSFET 30V 3.7mOhm@10V 30A N-Ch G-IV


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SISA10DN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 843
  • Description: MOSFET 30V 3.7mOhm@10V 30A N-Ch G-IV (Kg)

Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +20V, -16V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 30A
Threshold Voltage 1.1V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0037Ohm
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 20 mJ
Height 1.12mm
Length 3.4mm
Width 3.4mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code S-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.6W Ta 39W Tc
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.7m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2425pF @ 15V
Current - Continuous Drain (Id) @ 25°C 30A Tc
See Relate Datesheet

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