SISA18ADN-T1-GE3
| Parameters | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 38.3A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 21.5nC @ 10V |
| Rise Time | 10ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | +20V, -16V |
| Fall Time (Typ) | 7 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 38.3A |
| Threshold Voltage | 1.2V |
| Gate to Source Voltage (Vgs) | -16V |
| Drain-source On Resistance-Max | 0.0075Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 70A |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Avalanche Energy Rating (Eas) | 5 mJ |
| Mounting Type | Surface Mount |
| Radiation Hardening | No |
| Package / Case | PowerPAK® 1212-8 |
| Number of Pins | 8 |
| REACH SVHC | Unknown |
| Transistor Element Material | SILICON |
| RoHS Status | ROHS3 Compliant |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | C BEND |
| JESD-30 Code | S-PDSO-C5 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.2W Ta 19.8W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 19.8W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 7.5m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 15V |
See Relate Datesheet
