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SISS98DN-T1-GE3

MOSFET N-CH 200V 14.1A 1212-8


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SISS98DN-T1-GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 519
  • Description: MOSFET N-CH 200V 14.1A 1212-8 (Kg)

Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series ThunderFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 57W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 105m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 608pF @ 100V
Current - Continuous Drain (Id) @ 25°C 14.1A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 7.5V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 7.5V 10V
Vgs (Max) ±20V
See Relate Datesheet

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