banner_page

SM8S33AHE3/2D

TVS DIODE 33V 53.3V DO218AB


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Nocochips NO: 884-SM8S33AHE3/2D
  • Package: DO-218AB
  • Datasheet: PDF
  • Stock: 234
  • Description: TVS DIODE 33V 53.3V DO218AB(Kg)

Details

Tags

Parameters
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-218AB
Number of Pins 2
Diode Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, PAR®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 1
Termination SMD/SMT
ECCN Code EAR99
Type Zener
Applications Automotive
Additional Feature HIGH RELIABILITY, PD-CASE
Subcategory Transient Suppressors
Max Power Dissipation 6.6kW
Technology AVALANCHE
Terminal Form C BEND
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SM8S
Pin Count 1
Operating Supply Voltage 33V
Number of Elements 1
Leakage Current 10μA
Element Configuration Single
Power Dissipation 6.6kW
Power Line Protection No
Power - Peak Pulse 6600W 6.6kW
Max Reverse Leakage Current 10μA
Voltage - Clamping (Max) @ Ipp 53.3V
Clamping Voltage 53.3V
Peak Pulse Current 124A
Reverse Standoff Voltage 33V
Max Surge Current 124A
Peak Pulse Power 6.6kW
Direction Unidirectional
Test Current 5mA
Unidirectional Channels 1
Breakdown Voltage 36.7V
Reverse Breakdown Voltage 36.7V
Max Breakdown Voltage 40.6V
Height 4.6mm
Length 13.7mm
Width 8.7mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good