SMA5106
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 12-SIP |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2001 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 12 |
| ECCN Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| Max Power Dissipation | 5W |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 12 |
| JESD-30 Code | R-PSIP-T12 |
| Qualification Status | Not Qualified |
| Number of Elements | 4 |
| Configuration | COMPLEX |
| Operating Mode | ENHANCEMENT MODE |
| Power - Max | 5W |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | 4 NPN Darlington (Quad) |
| Collector Emitter Voltage (VCEO) | 1.5V |
| Max Collector Current | 5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 3A 2V |
| Current - Collector Cutoff (Max) | 10μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 3mA, 3A |
| Collector Emitter Breakdown Voltage | 120V |
| Drain Current-Max (Abs) (ID) | 4A |
| Drain-source On Resistance-Max | 0.55Ohm |
| Pulsed Drain Current-Max (IDM) | 8A |
| DS Breakdown Voltage-Min | 100V |
| Avalanche Energy Rating (Eas) | 16 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
