Parameters | |
---|---|
Terminal Position | DUAL |
Terminal Form | FLAT |
Pin Count | 2 |
JESD-30 Code | R-PDSO-F2 |
Number of Elements | 1 |
Element Configuration | Single |
Diode Type | PIN - Single |
Power Dissipation | 250mW |
Application | ATTENUATOR |
Forward Voltage | 800mV |
Capacitance @ Vr, F | 0.3pF @ 30V 1MHz |
Reverse Voltage | 200V |
Voltage - Peak Reverse (Max) | 200V |
Frequency Band | HIGH FREQUENCY TO L B |
Resistance @ If, F | 2Ohm @ 100mA 100MHz |
Diode Capacitance-Max | 0.3pF |
Minority Carrier Lifetime-Nom | 1 μs |
Diode Forward Resistance-Max | 2Ohm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Package / Case | SC-79, SOD-523 |
Number of Pins | 79 |
Diode Element Material | SILICON |
Operating Temperature | -65°C~150°C TA |
Packaging | Cut Tape (CT) |
Published | 2011 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
HTS Code | 8541.10.00.80 |
Technology | POSITIVE-INTRINSIC-NEGATIVE |