Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Surface Mount | YES |
Number of Pins | 2 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2014 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 2 |
Number of Elements | 1 |
Power Dissipation-Max | 90W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 90W |
Case Connection | DRAIN |
Turn On Delay Time | 95 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 8m Ω @ 50A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 13400pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 100A Ta |
Gate Charge (Qg) (Max) @ Vgs | 280nC @ 10V |
Rise Time | 1μs |
Drain to Source Voltage (Vdss) | 75V |
Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 820 ns |
Turn-Off Delay Time | 800 ns |
Continuous Drain Current (ID) | 100A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -75V |
Pulsed Drain Current-Max (IDM) | 400A |
Avalanche Energy Rating (Eas) | 468 mJ |
Height | 4.5mm |
Length | 10mm |
Width | 9.2mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |