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SMP3003-TL-1E

MOSFET P-CH 75V 100A SMP-FD


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-SMP3003-TL-1E
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 824
  • Description: MOSFET P-CH 75V 100A SMP-FD (Kg)

Details

Tags

Parameters
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 2
Weight 1.946308g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e6
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 90W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 90W
Case Connection DRAIN
Turn On Delay Time 95 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 8m Ω @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds 13400pF @ 20V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Gate Charge (Qg) (Max) @ Vgs 280nC @ 10V
Rise Time 1μs
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 820 ns
Turn-Off Delay Time 800 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 75V
Avalanche Energy Rating (Eas) 468 mJ
See Relate Datesheet

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