Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2003 |
Series | SIPMOS™ |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 360mW Ta |
Operating Mode | ENHANCEMENT MODE |
Turn On Delay Time | 2.4 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 5 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id | 1.8V @ 26μA |
Input Capacitance (Ciss) (Max) @ Vds | 45pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 200mA Ta |
Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 10V |
Rise Time | 3.2ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 3.6 ns |
Turn-Off Delay Time | 5.3 ns |
Continuous Drain Current (ID) | 200mA |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 0.2A |
Drain-source On Resistance-Max | 5Ohm |
DS Breakdown Voltage-Min | 60V |
Feedback Cap-Max (Crss) | 4.2 pF |
RoHS Status | ROHS3 Compliant |