SPA08N50C3
| Parameters | |
|---|---|
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Drain to Source Resistance | 600mOhm |
| Rds On Max | 600 mΩ |
| Capacitance - Input | 750pF |
| Height | 9.83mm |
| Length | 10.65mm |
| Width | 4.85mm |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Packaging | Bulk |
| Published | 2005 |
| Pbfree Code | yes |
| Part Status | Discontinued |
| Number of Terminations | 3 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 560V |
| Terminal Form | THROUGH-HOLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 7.6A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 32W |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 32W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 6 ns |
| Voltage - Threshold | 3V |
| Transistor Application | SWITCHING |
| Halogen Free | Halogen Free |
| Rise Time | 5ns |
| Drain to Source Voltage (Vdss) | 560V |
| Polarity/Channel Type | N-CHANNEL |
| Fall Time (Typ) | 7 ns |
| Turn-Off Delay Time | 60 ns |
| Continuous Drain Current (ID) | 7.6A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 560V |
| Pulsed Drain Current-Max (IDM) | 22.8A |
See Relate Datesheet
