Parameters | |
---|---|
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2005 |
Series | CoolMOS™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Voltage - Rated DC | 800V |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 11A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Voltage | 800V |
Power Dissipation-Max | 34W Tc |
Element Configuration | Single |
Current | 11A |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 41W |
Case Connection | ISOLATED |
Turn On Delay Time | 25 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 450m Ω @ 7.1A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 680μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 11A Tc |
Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V |
Rise Time | 15ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 7 ns |
Turn-Off Delay Time | 72 ns |
Continuous Drain Current (ID) | 11A |
Threshold Voltage | 3V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.45Ohm |
Drain to Source Breakdown Voltage | 800V |
Avalanche Energy Rating (Eas) | 470 mJ |
Height | 9.83mm |
Length | 10.65mm |
Width | 4.85mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |