Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Isolated Tab |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2005 |
Series | CoolMOS™ |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 34W Tc |
Operating Mode | ENHANCEMENT MODE |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 450m Ω @ 7.1A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 680μA |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 11A Tc |
Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V |
Drain to Source Voltage (Vdss) | 800V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 11A |
JEDEC-95 Code | TO-220AB |
Drain-source On Resistance-Max | 0.45Ohm |
Pulsed Drain Current-Max (IDM) | 33A |
DS Breakdown Voltage-Min | 800V |
Avalanche Energy Rating (Eas) | 470 mJ |
RoHS Status | ROHS3 Compliant |