Parameters | |
---|---|
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 14 ns |
Turn-Off Delay Time | 48 ns |
Continuous Drain Current (ID) | 8.8A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | -60V |
Avalanche Energy Rating (Eas) | 70 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
Series | SIPMOS® |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Voltage - Rated DC | -60V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | -8.8A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 42W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 42W |
Turn On Delay Time | 16 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 300m Ω @ 6.2A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 8.8A Ta |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
Rise Time | 46ns |
Drain to Source Voltage (Vdss) | 60V |