Parameters | |
---|---|
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 227W |
Turn On Delay Time | 25 ns |
Halogen Free | Halogen Free |
Drain to Source Voltage (Vdss) | 800V |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 72 ns |
Continuous Drain Current (ID) | 17A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 800V |
Avalanche Energy Rating (Eas) | 670 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Drain to Source Resistance | 250mOhm |
RoHS Status | RoHS Compliant |
Lead Free | Contains Lead |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Package / Case | TO-263 |
Number of Pins | 3 |
Packaging | Cut Tape |
Published | 2003 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 |
Number of Terminations | 2 |
Terminal Finish | Matte Tin (Sn) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 800V |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 17A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |