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SPB17N80C3

INFINEON - SPB17N80C3ATMA1 - MOSFET, N, TO-263


  • Manufacturer: Infineon
  • Nocochips NO: 9152-SPB17N80C3
  • Package: TO-263
  • Datasheet: PDF
  • Stock: 566
  • Description: INFINEON - SPB17N80C3ATMA1 - MOSFET, N, TO-263 (Kg)

Details

Tags

Parameters
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 227W
Turn On Delay Time 25 ns
Halogen Free Halogen Free
Drain to Source Voltage (Vdss) 800V
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 800V
Avalanche Energy Rating (Eas) 670 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 250mOhm
RoHS Status RoHS Compliant
Lead Free Contains Lead
Factory Lead Time 1 Week
Mount Surface Mount
Package / Case TO-263
Number of Pins 3
Packaging Cut Tape
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1
Number of Terminations 2
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 800V
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 17A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
See Relate Datesheet

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