Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2006 |
Series | SIPMOS® |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Voltage - Rated DC | -60V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Current Rating | -18.6A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 81.1W Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 81.1W |
Case Connection | DRAIN |
Turn On Delay Time | 12 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 130m Ω @ 13.2A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 860pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 18.7A Ta |
Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
Rise Time | 5.8ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 11 ns |
Turn-Off Delay Time | 25 ns |
Continuous Drain Current (ID) | -18.7A |
Threshold Voltage | -3V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | -60V |
Pulsed Drain Current-Max (IDM) | 74.8A |
Max Junction Temperature (Tj) | 175°C |
Nominal Vgs | -3 V |
Height | 4.5mm |
Length | 10mm |
Width | 4.4mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |