Parameters | |
---|---|
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2002 |
Series | CoolMOS™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 560V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 1.8A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 25W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 25W |
Case Connection | DRAIN |
Turn On Delay Time | 10 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 3 Ω @ 1.1A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 80μA |
Halogen Free | Not Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 1.8A Tc |
Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
Rise Time | 5ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 15 ns |
Turn-Off Delay Time | 70 ns |
Continuous Drain Current (ID) | 1.8A |
Threshold Voltage | 3V |
JEDEC-95 Code | TO-252AA |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 500V |
Drain-source On Resistance-Max | 3Ohm |
Drain to Source Breakdown Voltage | 500V |
Pulsed Drain Current-Max (IDM) | 5.4A |
Avalanche Energy Rating (Eas) | 50 mJ |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Contains Lead |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Transistor Element Material | SILICON |