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SPD02N80C3BTMA1

Trans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-SPD02N80C3BTMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 517
  • Description: Trans MOSFET N-CH 800V 2A 3-Pin(2+Tab) DPAK T/R (Kg)

Details

Tags

Parameters
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 800V
Drain Current-Max (Abs) (ID) 2A
Pulsed Drain Current-Max (IDM) 6A
Avalanche Energy Rating (Eas) 90 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 42W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 42W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.7 Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id 3.9V @ 120μA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 2A
JEDEC-95 Code TO-252AA
See Relate Datesheet

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