Parameters | |
---|---|
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 800V |
Drain Current-Max (Abs) (ID) | 2A |
Pulsed Drain Current-Max (IDM) | 6A |
Avalanche Energy Rating (Eas) | 90 mJ |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Series | CoolMOS™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Discontinued |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED, HIGH VOLTAGE |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 42W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 42W |
Case Connection | DRAIN |
Turn On Delay Time | 25 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.7 Ω @ 1.2A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 120μA |
Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 100V |
Current - Continuous Drain (Id) @ 25°C | 2A Tc |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Rise Time | 15ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 18 ns |
Turn-Off Delay Time | 65 ns |
Continuous Drain Current (ID) | 2A |
JEDEC-95 Code | TO-252AA |