Parameters | |
---|---|
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
Series | CoolMOS™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 38W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 1.4 Ω @ 2A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 135μA |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 3.2A Tc |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Drain to Source Voltage (Vdss) | 560V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
JEDEC-95 Code | TO-252AA |
Drain Current-Max (Abs) (ID) | 3.2A |
Pulsed Drain Current-Max (IDM) | 9.6A |
DS Breakdown Voltage-Min | 500V |
Avalanche Energy Rating (Eas) | 100 mJ |
RoHS Status | RoHS Compliant |