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SPD06N60C3ATMA1

Trans MOSFET N-CH 650V 6.2A 3-Pin(2+Tab) TO-252


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-SPD06N60C3ATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 325
  • Description: Trans MOSFET N-CH 650V 6.2A 3-Pin(2+Tab) TO-252 (Kg)

Details

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Parameters
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 52 ns
Continuous Drain Current (ID) 6.2A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Input Capacitance 620pF
Drain to Source Resistance 680mOhm
Rds On Max 750 mΩ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PG-TO252-3-1
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series CoolMOS™
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 650V
Technology MOSFET (Metal Oxide)
Current Rating 6.2A
Power Dissipation-Max 74W Tc
Power Dissipation 74W
Turn On Delay Time 7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 750mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 3.9V @ 260μA
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.2A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 600V
See Relate Datesheet

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