Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
Series | SIPMOS® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 40W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 40W |
Turn On Delay Time | 10 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 400m Ω @ 4.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Halogen Free | Not Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 530pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 7A Tc |
Gate Charge (Qg) (Max) @ Vgs | 31.5nC @ 10V |
Rise Time | 40ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 30 ns |
Turn-Off Delay Time | 55 ns |
Continuous Drain Current (ID) | 7A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 200V |
Drain Current-Max (Abs) (ID) | 7A |
Drain-source On Resistance-Max | 0.4Ohm |
Pulsed Drain Current-Max (IDM) | 28A |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Contains Lead |