Parameters | |
---|---|
Power Dissipation-Max | 128W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 128W |
Case Connection | DRAIN |
Turn On Delay Time | 9.5 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 240m Ω @ 10.6A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 1.54mA |
Halogen Free | Not Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 1280pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 15A Tc |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
Rise Time | 23ns |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 16 ns |
Turn-Off Delay Time | 33 ns |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Continuous Drain Current (ID) | 15A |
Mounting Type | Surface Mount |
JEDEC-95 Code | TO-252AA |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Gate to Source Voltage (Vgs) | 20V |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Max Dual Supply Voltage | -100V |
Operating Temperature | -55°C~175°C TJ |
Drain-source On Resistance-Max | 0.24Ohm |
Packaging | Tape & Reel (TR) |
Published | 2007 |
Drain to Source Breakdown Voltage | -100V |
Series | Automotive, AEC-Q101, SIPMOS® |
Pulsed Drain Current-Max (IDM) | 60A |
JESD-609 Code | e3 |
Nominal Vgs | -3 V |
Height | 2.41mm |
Pbfree Code | no |
Length | 6.73mm |
Part Status | Active |
Width | 6.22mm |
REACH SVHC | No SVHC |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
RoHS Status | ROHS3 Compliant |
Number of Terminations | 2 |
Lead Free | Contains Lead, Lead Free |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Qualification Status | Not Qualified |
Number of Elements | 1 |