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SPD30N03S2L07GBTMA1

MOSFET N-CH 30V 30A TO252-3


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-SPD30N03S2L07GBTMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 445
  • Description: MOSFET N-CH 30V 30A TO252-3 (Kg)

Details

Tags

Parameters
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 136W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 85μA
Input Capacitance (Ciss) (Max) @ Vds 2530pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Rise Time 17ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 47 ns
Turn-Off Delay Time 62 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0098Ohm
Pulsed Drain Current-Max (IDM) 120A
Avalanche Energy Rating (Eas) 250 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series OptiMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
See Relate Datesheet

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