SPI15N65C3XKSA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Number of Pins | 3 |
| Supplier Device Package | PG-TO262-3-1 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Series | CoolMOS™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 156W Tc |
| Element Configuration | Single |
| Power Dissipation | 156W |
| Turn On Delay Time | 32 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 9.4A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 675μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 15A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
| Rise Time | 14ns |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 70 ns |
| Continuous Drain Current (ID) | 15A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 650V |
| Drain to Source Breakdown Voltage | 650V |
| Input Capacitance | 1.6nF |
| Drain to Source Resistance | 280mOhm |
| Rds On Max | 280 mΩ |
| Nominal Vgs | 3 V |
| Height | 9.45mm |
| Length | 10.2mm |
| Width | 4.5mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
