SPI21N50C3XKSA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Number of Pins | 3 |
| Supplier Device Package | PG-TO262-3-1 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| Series | CoolMOS™ |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 560V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 11.6A |
| Power Dissipation-Max | 208W Tc |
| Element Configuration | Single |
| Power Dissipation | 208W |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 13.1A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 21A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 95nC @ 10V |
| Rise Time | 5ns |
| Drain to Source Voltage (Vdss) | 560V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 4.5 ns |
| Turn-Off Delay Time | 67 ns |
| Continuous Drain Current (ID) | 21A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 500V |
| Drain to Source Breakdown Voltage | 500V |
| Input Capacitance | 2.4nF |
| Drain to Source Resistance | 190mOhm |
| Rds On Max | 190 mΩ |
| Height | 9.45mm |
| Length | 10.36mm |
| Width | 4.52mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
