SPN03N60C3
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | CoolMOS™ |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.29.00.95 |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 650V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 700mA |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1.8W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.8W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.4 Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 135μA |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 700mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Rise Time | 3ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3 ns |
| Turn-Off Delay Time | 64 ns |
| Continuous Drain Current (ID) | 700mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.7A |
| Drain to Source Breakdown Voltage | 650V |
| Pulsed Drain Current-Max (IDM) | 3A |
| Nominal Vgs | 3 V |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet
