Parameters | |
---|---|
Turn On Delay Time | 10 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 190mOhm @ 13.1A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 20.7A Tc |
Gate Charge (Qg) (Max) @ Vgs | 114nC @ 10V |
Rise Time | 5ns |
Drain to Source Voltage (Vdss) | 600V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 4.5 ns |
Turn-Off Delay Time | 67 ns |
Continuous Drain Current (ID) | 20.7A |
Threshold Voltage | 3V |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 600V |
Dual Supply Voltage | 650V |
Input Capacitance | 2.4nF |
Drain to Source Resistance | 190mOhm |
Rds On Max | 190 mΩ |
Nominal Vgs | 3 V |
Height | 9.25mm |
Length | 10mm |
Width | 4.4mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Supplier Device Package | PG-TO220-3-1 |
Weight | 45.359237g |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2005 |
Series | CoolMOS™ |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Termination | Through Hole |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Voltage - Rated DC | 650V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 20.7A |
Power Dissipation-Max | 208W Tc |
Element Configuration | Single |
Power Dissipation | 208W |