Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Supplier Device Package | PG-TO220-3-1 |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2011 |
Series | CoolMOS™ |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Voltage - Rated DC | 650V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 20.7A |
Power Dissipation-Max | 208W Tc |
Element Configuration | Single |
Power Dissipation | 208W |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 220mOhm @ 13.1A, 10V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 20.7A Tc |
Gate Charge (Qg) (Max) @ Vgs | 124nC @ 10V |
Rise Time | 15ns |
Drain to Source Voltage (Vdss) | 650V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 6.4 ns |
Turn-Off Delay Time | 59 ns |
Continuous Drain Current (ID) | 20.7A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 600V |
Input Capacitance | 2.4nF |
Drain to Source Resistance | 190mOhm |
Rds On Max | 220 mΩ |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |