SPP20N60S5
| Parameters | |
|---|---|
| Height | 4.4mm |
| Length | 8.64mm |
| Width | 10.26mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 1 Week |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| Series | CoolMOS™ |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 650V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 20A |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 208W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 208W |
| Case Connection | DRAIN |
| Turn On Delay Time | 120 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 190m Ω @ 13A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 1mA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 103nC @ 10V |
| Rise Time | 25ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 30 ns |
| Turn-Off Delay Time | 140 ns |
| Continuous Drain Current (ID) | 20A |
| Threshold Voltage | 4.5V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 600V |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 40A |
| Dual Supply Voltage | 600V |
| Avalanche Energy Rating (Eas) | 690 mJ |
| Nominal Vgs | 4.5 V |
See Relate Datesheet
