Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 1999 |
Series | SIPMOS® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Pin Count | 3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 340W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 340W |
Case Connection | DRAIN |
Turn On Delay Time | 24 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 23m Ω @ 64A, 10V |
Vgs(th) (Max) @ Id | 4V @ 5.5mA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 5033pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 80A Tc |
Gate Charge (Qg) (Max) @ Vgs | 173nC @ 10V |
Rise Time | 18ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 30 ns |
Turn-Off Delay Time | 56 ns |
Continuous Drain Current (ID) | 80A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | -60V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |