SPS02N60C3
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| Series | CoolMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 25W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 25W |
| Turn On Delay Time | 6 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 3 Ω @ 1.1A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 80μA |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 12.5nC @ 10V |
| Rise Time | 3ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 68 ns |
| Continuous Drain Current (ID) | 1.8A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 600V |
| Drain-source On Resistance-Max | 3Ohm |
| Drain to Source Breakdown Voltage | 650V |
| Pulsed Drain Current-Max (IDM) | 5.4A |
| Dual Supply Voltage | 650V |
| Avalanche Energy Rating (Eas) | 50 mJ |
| Nominal Vgs | 3 V |
| REACH SVHC | Unknown |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
