Parameters | |
---|---|
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Halogen Free | Not Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 25V |
Packaging | Tube |
Published | 2005 |
Current - Continuous Drain (Id) @ 25°C | 7.3A Tc |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
Series | CoolMOS™ |
Rise Time | 3.5ns |
JESD-609 Code | e3 |
Pbfree Code | no |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Part Status | Last Time Buy |
Vgs (Max) | ±20V |
Fall Time (Typ) | 7 ns |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Turn-Off Delay Time | 60 ns |
Number of Terminations | 3 |
Continuous Drain Current (ID) | 7.3A |
Gate to Source Voltage (Vgs) | 20V |
Terminal Finish | Tin (Sn) |
Max Dual Supply Voltage | 600V |
Drain-source On Resistance-Max | 0.6Ohm |
Additional Feature | AVALANCHE RATED |
Pulsed Drain Current-Max (IDM) | 21.9A |
Voltage - Rated DC | 650V |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Current Rating | 7.3A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 83W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 83W |
Turn On Delay Time | 6 ns |
FET Type | N-Channel |
Mount | Through Hole |
Transistor Application | SWITCHING |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 600m Ω @ 4.6A, 10V |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Vgs(th) (Max) @ Id | 3.9V @ 350μA |