Parameters | |
---|---|
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2004 |
Series | CoolMOS™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 208W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | ISOLATED |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 190m Ω @ 13A, 10V |
Vgs(th) (Max) @ Id | 5.5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 20A Tc |
Gate Charge (Qg) (Max) @ Vgs | 103nC @ 10V |
Drain to Source Voltage (Vdss) | 600V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Drain Current-Max (Abs) (ID) | 20A |
Drain-source On Resistance-Max | 0.19Ohm |
Pulsed Drain Current-Max (IDM) | 40A |
DS Breakdown Voltage-Min | 600V |
Avalanche Energy Rating (Eas) | 690 mJ |
RoHS Status | RoHS Compliant |