Parameters | |
---|---|
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2005 |
Series | CoolMOS™ |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED |
Voltage - Rated DC | 650V |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 24.3A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 240W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 240W |
Turn On Delay Time | 13 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 160m Ω @ 15.4A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 1.2mA |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 24.3A Tc |
Gate Charge (Qg) (Max) @ Vgs | 135nC @ 10V |
Rise Time | 21ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 14 ns |
Turn-Off Delay Time | 140 ns |
Continuous Drain Current (ID) | 24.3A |
Threshold Voltage | 3V |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.16Ohm |
Drain to Source Breakdown Voltage | 650V |
Pulsed Drain Current-Max (IDM) | 72.9A |
Avalanche Energy Rating (Eas) | 780 mJ |
Height | 21.1mm |
Length | 16.03mm |
Width | 5.16mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |