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SPW24N60C3FKSA1

MOSFET N-CH 650V 24.3A TO-247


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-SPW24N60C3FKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 754
  • Description: MOSFET N-CH 650V 24.3A TO-247 (Kg)

Details

Tags

Parameters
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 650V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 24.3A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 240W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 240W
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 15.4A, 10V
Vgs(th) (Max) @ Id 3.9V @ 1.2mA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24.3A Tc
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Rise Time 21ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 24.3A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.16Ohm
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 72.9A
Avalanche Energy Rating (Eas) 780 mJ
Height 21.1mm
Length 16.03mm
Width 5.16mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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