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SQ2315ES-T1_GE3

Trans MOSFET P-CH 12V 5A Automotive 3-Pin SOT-23 T/R


  • Manufacturer: Vishay Siliconix
  • Nocochips NO: 880-SQ2315ES-T1_GE3
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 912
  • Description: Trans MOSFET P-CH 12V 5A Automotive 3-Pin SOT-23 T/R (Kg)

Details

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Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23-3 (TO-236)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Tc
Power Dissipation 2W
Turn On Delay Time 17 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 50mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 4V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Rise Time 19ns
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) -5A
Threshold Voltage -450mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
Max Junction Temperature (Tj) 175°C
Drain to Source Resistance 42mOhm
Height 1.12mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet

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