SQ2398ES-T1_GE3
| Parameters | |
|---|---|
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 300m Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 152pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 3.4nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 1.6A |
| Drain-source On Resistance-Max | 0.3Ohm |
| DS Breakdown Voltage-Min | 100V |
| Feedback Cap-Max (Crss) | 12 pF |
| RoHS Status | Non-RoHS Compliant |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Reach Compliance Code | unknown |
| JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2W Tc |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
See Relate Datesheet
